Preparing for future lithography needs is a top priority at Nikon. As IC manufacturers search for optimal methods for producing next-generation devices, Nikon is developing several advanced approaches in parallel. This will ensure that the right production tools are available when they are needed.

Double Exposure/Double Patterning (DE/DP)
Nikon has been aggressively engaged in double patterning (DP) development, with a joint development program between LETI and Nikon underway since early 2007. At LithoVision 2009, it was reported that in addition to validating the theoretical Nikon error models used to establish overlay and CD requirements for DP system design, a DP process down to k₁ of 0.14 was demonstrated at CEA-Leti using dry lithography.

Most recently, Nikon began shipping the NSR-S620D immersion scanner, which was designed to meet the stringent overlay, throughput, and availability requirements for 32 nm double patterning and beyond. The S620D (NA = 1.35) supports overlay capabilities down to 2 nm and throughput up to 200 wafers per hour.  Based on the new Streamlign platform, the S620D will not only satisfy the aggressive performance requirements for DP lithography at 32 nm, but also be extendible to 22 nm applications. 

EUVL
After double patterning with ArF immersion, Extreme Ultra-Violet Lithography (EUVL) is the front-running technology for next-generation lithography. Therefore, in addition to highly successful immersion scanner integration and double patterning programs, Nikon is fully engaged in developing EUVL systems for sub 22 nm applications.

Nikon EUV1 systems, with a numerical aperture (NA) of 0.25 and 1/4x reduction are already being used by customers for early process development, and EUV High Volume Manufacturing system availability will align with IC manufacturers’ requirements and the necessary infrastructure support.

Lithography requirements continue to accelerate. With a proven history of innovation, Nikon will be there to meet the challenge and keep you ahead of the competition.