As the semiconductor industry continues its never ending technology development by implementing new process generations every two years or less, Nikon continues to invest heavily in new product development.

In January 2006, Nikon shipped the world’s first hyper-NA immersion lithography system—the NSR-S609B.  This was followed by the NSR-S610C, the industry’s first 1.30 NA immersion scanner for 45 nm half-pitch production, in February 2007. Later that year, Nikon introduced the advanced NSR-S310F and NSR-S210D scanners. These “dry” lithography systems adopt the same platform as the NSR-S610C, using the Tandem Stage to provide superior performance with excellent cost of ownership.

Most recently, in February 2008, Nikon announced that they will provide an immersion scanner for double patterning (DP), with DP tools available in 2009. Overlay accuracy <4.5 nm (M + 3σ) has already been achieved using the S610C, and the next generation immersion tool for single and double patterning applications will deliver overlay accuracy to meet the aggressive DP requirements. The tool will utilize the proven Tandem Stage platform and Nikon proprietary Local Fill Technology.

Nikon is also fully engaged in EUV development, with the EUV1 already being used for early process development. The EUV1 will be followed by the EUV2 for sub 32 nm device development and production tool verification in 2010.

Nikon is preparing to deliver the best lithography solutions for tomorrow by investing today in the development of immersion lithography, double patterning, EUVL, and other advanced lithography solutions.