Industry’s first 1.30 NA scanner
for 45 nm production and 32 nm development
The NSR-S610C was the industry’s first 1.30 NA scanner
for 45 nm mass production and development of 32 nm devices.
This ArF immersion scanner uses the same Nikon proprietary
Local Fill Technology and Tandem Stage design, which have
already been proven on the earlier generation NSR-S609B immersion
scanner. The S610C began shipping in early 2007.
Superior imaging
The S610C uses an innovative multi-axial catadioptric lens design
to deliver a 1.30 NA with all aspects of performance optimized
for 45 nm memory requirements. The S610C lens design enables
imaging below 45 nm with a superior depth of focus, and the
fourth generation of POLANO polarization control provides enhanced
image contrast without any loss of illumination power or throughput. In addition, the Nikon Infrared Aberration Control (IAC) system minimizes RET-induced thermal aberrations to enhance astigmatism performance and stability.
No immersion-specific defects
Innovative Nikon Local Fill Technology combines our proprietary nozzle design, high water flow rate, and surface tension for water containment, enabling performance free of tool-induced
immersion-specific
defects. Nikon Local Fill Technology is compatible with a wide
variety of ArF resists and topcoats, enabling defect levels on
par with today’s most advanced dry ArF systems at the maximum
throughput.
Designed for high volume manufacturing
The Nikon Tandem Stage was designed for high volume manufacturing,
providing optimized performance and efficiency for immersion lithography.
The exposure stage processes wafers at very high rates, while the
calibration stage is used for calibrations during wafer exchange.
The Tandem Stage enables throughput ≥ 130 wafers per hour, and
delivers wet-dry overlay matching equivalent to dry system performance.
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NSR-S620D
